Transistor

1015 Transistor (IC) Datasheet. Cross Reference Search. A1015 Equivalent

Sort Designator: A1015

Material of transistor: Si

Extremity: PNP

Greatest authority control scattering (Pc), W: 0.2

Most extreme authority base voltage |Ucb|, V: 50

Most extreme authority emitter voltage |Uce|, V: 50

Most extreme emitter-base voltage |Ueb|, V: 5

Most extreme authority current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 125

Move recurrence (ft), MHz: 80

Gatherer capacitance (Cc), pF:

Forward current exchange proportion (hFE), min: 130

Commotion Figure, dB: -

Bundle of A1015 transistor: SOT23

2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT handle) 2SA1015 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications � High voltage and high ebb and flow: VCEO = - 50 V (min), I = - 150 mA (max) C � Excellent h linearity: h = 80 (typ.) at V = - 6 V, I = - 150 mA FE (2) CE C : hFE (IC = - 0.1 mA)/hFE (IC = - 2 mA) = 0.95 (typ.)

KSA1015 LOW FREQUENCY AMPLIFIER � Collector-Base Voltage : VCBO= - 50V � Complement to KSC1815 TO-92 1. Emitter 2. Authority 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless generally noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 50 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 150 mA